Search for: All records

Abstract Terahertz (THz) spin dynamics and vanishing stray field make antiferromagnetic (AFM) materials the most promising candidate for the next-generation magnetic memory technology with revolutionary storage density and writing speed. However, owing to the extremely large exchange energy barriers, energy-efficient manipulation has been a fundamental challenge in AFM systems. Here, we report an electrical writing of antiferromagnetic orders through a record-low current density on the order of 10 6 A cm −2 facilitated by the unique AFM-ferromagnetic (FM) phase transition in FeRh. By introducing a transient FM state via current-induced Joule heating, the spin-orbit torque can switch the AFM order parameter by 90° with a reduced writing current density similar to ordinary FM materials. This mechanism is further verified by measuring the temperature and magnetic bias field dependences, where the X-ray magnetic linear dichroism (XMLD) results confirm the AFM switching besides the electrical transport measurement. Our findings demonstrate the exciting possibility of writing operations in AFM-based devices with a lower current density, opening a new pathway towards pure AFM memory applications. 

Abstract All-electrical driven magnetization switching attracts much attention in next-generation spintronic memory and logic devices, particularly in magnetic random-access memory (MRAM) based on the spin–orbit torque (SOT), i.e. SOT-MRAM, due to its advantages of low power consumption, fast write/read speed, and improved endurance, etc. For conventional SOT-driven switching of the magnet with perpendicular magnetic anisotropy, an external assisted magnetic field is necessary to break the inversion symmetry of the magnet, which not only induces the additional power consumption but also makes the circuit more complicated. Over the last decade, significant effort has been devoted to field-free magnetization manipulation by using SOT. In this review, we introduce the basic concepts of SOT. After that, we mainly focus on several approaches to realize the field-free deterministic SOT switching of the perpendicular magnet. The mechanisms mainly include mirror symmetry breaking, chiral symmetry breaking, exchange bias, and interlayer exchange coupling. Furthermore, we show the recent progress in the study of SOT with unconventional origin and symmetry. The final section is devoted to the industrial-level approach for potential applications of field-free SOT switching in SOT-MRAM technology. 

Giant spin-orbit torque (SOT) from topological insulators (TIs) provides an energy efficient writing method for magnetic memory, which, however, is still premature for practical applications due to the challenge of the integration with magnetic tunnel junctions (MTJs). Here, we demonstrate a functional TI-MTJ device that could become the core element of the future energy-efficient spintronic devices, such as SOT-based magnetic random-access memory (SOT-MRAM). The state-of-the-art tunneling magnetoresistance (TMR) ratio of 102% and the ultralow switching current density of 1.2 × 10⁵ A cm⁻²have been simultaneously achieved in the TI-MTJ device at room temperature, laying down the foundation for TI-driven SOT-MRAM. The charge-spin conversion efficiencyθ_SHin TIs is quantified by both the SOT-induced shift of the magnetic switching field (θ_SH = 1.59) and the SOT-induced ferromagnetic resonance (ST-FMR) (θ_SH = 1.02), which is one order of magnitude larger than that in conventional heavy metals. These results inspire a revolution of SOT-MRAM from classical to quantum materials, with great potential to further reduce the energy consumption.

 

Abstract The promise of high-density and low-energy-consumption devices motivates the search for layered structures that stabilize chiral spin textures such as topologically protected skyrmions. At the same time, recently discovered long-range intrinsic magnetic orders in the two-dimensional van der Waals materials provide a new platform for the discovery of novel physics and effects. Here we demonstrate the Dzyaloshinskii–Moriya interaction and Néel-type skyrmions are induced at the WTe 2 /Fe 3 GeTe 2 interface. Transport measurements show the topological Hall effect in this heterostructure for temperatures below 100 K. Furthermore, Lorentz transmission electron microscopy is used to directly image Néel-type skyrmion lattice and the stripe-like magnetic domain structures as well. The interfacial coupling induced Dzyaloshinskii–Moriya interaction is estimated to have a large energy of 1.0 mJ m −2 . This work paves a path towards the skyrmionic devices based on van der Waals layered heterostructures.